A JL-SDR-IMPATT Device with Improved Efficiency
نویسندگان
چکیده
منابع مشابه
Transient Thermal Analysis of Pulsed Silicon SDR IMPATT at 35 GHz
In this paper the transient thermal analysis of 35 GHz pulsed silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device is presented. A double-iterative field maximum computer method based on drift-diffusion model is used to obtain the DC and high frequency properties of the device. A transient thermal model has been developed by the authors’ to study the temperature trans...
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ژورنال
عنوان ژورنال: Journal of Microwaves, Optoelectronics and Electromagnetic Applications
سال: 2017
ISSN: 2179-1074
DOI: 10.1590/2179-10742017v16i2682